Correlation of G/sub m/ degradation of submicrometer MOSFETs with refractive index and mechanical stress of encapsulation materials
- 1 March 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (3), 542-547
- https://doi.org/10.1109/16.19966
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Correlation of refractive index and silicon content of silicon oxynitride filmsThin Solid Films, 1989
- Mechanical stress and hydrogen effects on hot carrier injectionPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Diffusion of radiolytic molecular hydrogen as a mechanism for the post-irradiation buildup of interface states in SiO2-on-Si structuresJournal of Applied Physics, 1985
- Hot-electron and hole-emission effects in short n-channel MOSFET'sIEEE Transactions on Electron Devices, 1985
- Relationship between MOSFET degradation and hot-electron-induced interface-state generationIEEE Electron Device Letters, 1984
- An empirical model for device degradation due to hot-carrier injectionIEEE Electron Device Letters, 1983
- Thermal Stress in CVD PSG and SiO2 Films on Silicon SubstratesJournal of the Electrochemical Society, 1983
- Stress-sensitive properties of silicon-gate MOS devicesSolid-State Electronics, 1981
- Threshold-voltage instability in MOSFET's due to channel hot-hole emissionIEEE Transactions on Electron Devices, 1981
- The hydrogen content of plasma-deposited silicon nitrideJournal of Applied Physics, 1978