Pulsed excimer and Nd:YAG laser crystallization of a-Si:H
- 1 December 1990
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 46 (1), 378-382
- https://doi.org/10.1016/0169-4332(90)90174-x
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Assessment of the Surface Quality of SIMOX Wafers by UV ReflectanceJournal of the Electrochemical Society, 1990
- Comparison between microscopical aspects of a-Si films crystallized by pulsed UV excimer laser and calculated temperature profilesApplied Surface Science, 1989
- Excimer laser recrystallization of amorphous Si films characterized by grazing X-ray diffraction and optical reflectivityApplied Surface Science, 1989
- High-performance TFTs fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon filmIEEE Transactions on Electron Devices, 1989
- XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFT'sJapanese Journal of Applied Physics, 1989
- Raman spectroscopy of low-dimensional semiconductorsCritical Reviews in Solid State and Materials Sciences, 1988
- Optical properties of UV laser photolytic deposition of hydrogenated amorphous silicon (a-Si:H)Journal of Applied Physics, 1986
- Raman scattering from hydrogenated microcrystalline and amorphous siliconJournal of Physics C: Solid State Physics, 1982
- Optical properties and transport in microcrystalline silicon prepared at temperatures below 400 °CJournal of Applied Physics, 1981