Photoluminescence of GaAs single quantum wells confined by short-period all-binary GaAs/AlAs superlattices
- 1 December 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (11), 1222-1224
- https://doi.org/10.1063/1.95105
Abstract
GaAs single quantum well heterostructures (SQWH’s) composed of all-binary AlAs/GaAs heterostructures by using AlAs/GaAs short-period superlattices (SPS) instead of the ternary alloy as cladding layers were grown by molecular beam epitaxy at low substrate temperature. Detailed photoluminescence measurements at 2 K reveal that these SPS confined SQWH’s exhibit superior luminescence properties. They are therefore very attractive for application in new optoelectronic devices. The SPS configuration has a strong effect on the energy of the confined particle transition because of the fully interacting quantum well system.Keywords
This publication has 6 references indexed in Scilit:
- Improved GaAs/AlGaAs single quantum wells through the use of thin superlattice buffersApplied Physics Letters, 1984
- Photoluminescence of AlxGa1?xAs/GaAs quantum well heterostructures grown by molecular beam epitaxyApplied Physics A, 1984
- Impurity trapping, interface structure, and luminescence of GaAs quantum wells grown by molecular beam epitaxyApplied Physics Letters, 1984
- Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular-beam epitaxyApplied Physics Letters, 1981
- Epitaxial structures with alternate-atomic-layer composition modulationApplied Physics Letters, 1976
- Laser oscillation from quantum states in very thin GaAs−Al0.2Ga0.8As multilayer structuresApplied Physics Letters, 1975