Recombination luminescence from ion implanted silicon

Abstract

Peaks at 0.790, 0.970, 1.018, 1.080, 1.034 and 1.039 eV in the photoluminescence spectra observed from pulled, float zone, and Lopex silicon implanted at room temperature with 150 keV boron and phosphorus ions to fluences from 10¹² to 10¹⁵ ions/cm² are reported. Data is presented describing the effects of annealing, fluence, ion species and substrate on these lines and defect models are proposed for the recombination centers.