Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
- 1 January 1998
- journal article
- Published by Springer Nature in MRS Internet Journal of Nitride Semiconductor Research
Abstract
Surface reconstructions during homoepitaxial growth of GaN (0001) are studied using reflection high-energy electron diffraction and scanning tunneling microscopy. In agreement with previous workers, a distinct transition from rough to smooth morphology is seen as a function of Ga to N ratio during growth. However, in contrast to some prior reports, no evidence for a 2×2 reconstruction during GaN growth is observed. Observations have been made using four different nitrogen plasma sources, with similar results in each case. A 2×2 structure of the surface can be obtained, but only during nitridation of the surface in the absence of a Ga flux.Keywords
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