Wavelength controllability of InGaAs/GaAs quantum dots emitting at 1.3 μm region
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
In this paper, we investigate the photoluminescence (PL) emission characteristics of InGaAs/GaAs quantum dots emitting in the 1.3 μm region under various growth condition using the ALE technique. We demonstrate that the emission wavelength can be controlled by the number of ALE cycles and In composition of the buffer layer. We show the influence on emission characteristics of the supply sequence in ALE Author(s) Ohtsuka, Nobuyuki Fujitsu Labs. Ltd., Atsugi, Japan Mukai, K.Keywords
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