Model calculations for accelerated As ion doping of Si during molecular beam epitaxy

Abstract

A model is presented for calculating the incorporation probability and steady state depth distribution of accelerated dopants in films deposited from the vapor phase. Terms accounting for thermal sticking probabilities, low-energy implantation, diffusion, surface segregation, and preferential sputtering are included. Model predictions are shown to be in good agreement with Ota’s experimental data [J. Appl. Phys. 51, 1102 (1980)] for the incorporation probability of As, as a function of film-growth temperature and As acceleration energy, in Si films grown by molecular beam epitaxy.