Calibration of the infrared absorption due to silicon in gallium arsenide
- 14 August 1985
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 18 (8), 1575-1583
- https://doi.org/10.1088/0022-3727/18/8/021
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- An infrared and neutron scattering analysis of the precipitation of oxygen in dislocation-free siliconJournal of Physics C: Solid State Physics, 1984
- Chromium and iron impurities in liquid encapsulated Czochralski gallium arsenideJournal of Applied Physics, 1982
- Oxygen-related gettering of silicon during growth of bulk GaAs Bridgman crystalsJournal of Physics C: Solid State Physics, 1982
- The properties of gallium arsenide doubly doped with silicon and germanium or silicon and tinJournal of Crystal Growth, 1980
- Infrared absorption bands induced by Si-related defects in GaAs: Absorption cross sectionsJournal of Applied Physics, 1980
- Silicon donor-acceptor pair defects in gallium arsenideJournal of Physics C: Solid State Physics, 1979
- Carbon, oxygen and silicon impurities in gallium arsenideJournal of Physics D: Applied Physics, 1978
- The strength of the infrared absorption from silicon donors and silicon acceptors in gallium arsenideJournal of Physics C: Solid State Physics, 1976
- Infrared absorption of mixed silicon isotope pairs in gallium arsenideJournal of Applied Physics, 1974
- Local Mode Absorption in Compensated Silicon-Doped Gallium ArsenideJournal of Applied Physics, 1966