The properties of gallium arsenide doubly doped with silicon and germanium or silicon and tin
- 30 November 1980
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 50 (3), 619-624
- https://doi.org/10.1016/0022-0248(80)90005-6
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- The behaviour of boron impurities in n-type gallium arsenide and gallium phosphideJournal of Physics C: Solid State Physics, 1974