Surface recombination velocity imaging of wet-cleaned silicon wafers using quantitative heterodyne lock-in carrierography

Abstract

InGaAs-camera based heterodyne lock-in carrierography (HeLIC) is developed for surface recombination velocity (SRV) imaging characterization of bare (oxide-free) hydrogen passivated Si wafer surfaces. Samples prepared using four different hydrofluoric special-solution etching conditions were tested, and a quantitative assessment of their surface quality vs. queue-time after the hydrogen passivation process was made. The data acquisition time for an SRV image was about 3 min. A “round-trip” frequency-scan mode was introduced to minimize the effects of signal transients on data self-consistency. Simultaneous best fitting of HeLIC amplitude-frequency dependencies at various queue-times was used to guarantee the reliability of resolving surface and bulk carrier recombination/transport properties. The dynamic range of the measured SRV values was established from 0.1 to 100 m/s.