On the growth of CoSi2 and CoSi2/Si heterostructures on Si(111)
- 31 August 1987
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 63 (6), 445-449
- https://doi.org/10.1016/0038-1098(87)90268-7
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Silicon overgrowth on CoSi2/Si(111) epitaxial structures: Application to permeable base transistorJournal of Crystal Growth, 1987
- Study of ballistic transport in Si-CoSi2-Si metal base transistorsApplied Physics Letters, 1986
- The atomic structure of the NiSi2–Si(111) interfaceJournal of Vacuum Science & Technology A, 1986
- Formation of Uniform Solid-Phase Epitaxial CoSi2 Films by Patterning MethodJapanese Journal of Applied Physics, 1985
- Uniformity and crystalline quality of CoSi2/Si heterostructures grown by molecular beam epitaxy and reactive deposition epitaxyJournal of Vacuum Science & Technology B, 1985
- Electrical Transport in thin Silicide FilmsMRS Proceedings, 1985
- GROWTH AND CHARACTERIZATION OF EPITAXIAL Si/CoSi2 AND Si/CoSi2/Si HETEROSTRUCTURESMRS Proceedings, 1985
- Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiEpitaxial StructuresPhysical Review Letters, 1983
- Growth of single-crystal CoSi2 on Si(111)Applied Physics Letters, 1982
- Double heteroepitaxy in the Si (111)/CoSi2/Si structureApplied Physics Letters, 1980