GROWTH AND CHARACTERIZATION OF EPITAXIAL Si/CoSi2 AND Si/CoSi2/Si HETEROSTRUCTURES
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Molecular beam epitaxial growth of Si on CoSi2 substratesApplied Physics Letters, 1985
- Formation of Uniform Solid-Phase Epitaxial CoSi2 Films by Patterning MethodJapanese Journal of Applied Physics, 1985
- Transistor action in Si/CoSi2/Si heterostructuresApplied Physics Letters, 1985
- Specular Boundary Scattering and Electrical Transport in Single-Crystal Thin Films of CoPhysical Review Letters, 1985
- Uniformity and crystalline quality of CoSi2/Si heterostructures grown by molecular beam epitaxy and reactive deposition epitaxyJournal of Vacuum Science & Technology B, 1985
- Growth of single-crystal CoSi2 on Si(111)Applied Physics Letters, 1982
- Silicon/metal silicide heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1980
- Double heteroepitaxy in the Si (111)/CoSi2/Si structureApplied Physics Letters, 1980
- Refractory silicides for integrated circuitsJournal of Vacuum Science and Technology, 1980
- Interfacial energy as a factor in controlling epitaxial behaviorSurface Science, 1970