Observation of polarization independent electric field effect in InGaAs/InP tensile strained quantum well and its proposal for optical switch
- 19 October 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (16), 1904-1906
- https://doi.org/10.1063/1.108358
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiersIEEE Journal of Quantum Electronics, 1991
- Effects of strain in multiple quantum well distributed feedback lasersApplied Physics Letters, 1990
- InGaAs-InAlAs quantum well intersecting waveguide switch operating at 1.55 mu mIEEE Photonics Technology Letters, 1990
- Strained-layer InGaAs/InAlAs multiple quantum wells for efficient optical waveguide modulation at 1.55 μmElectronics Letters, 1990
- Multiple quantum well (MQW) waveguide modulatorsJournal of Lightwave Technology, 1988
- High-efficiency electroabsorption in quaternary AlGaInAs quantum-well optical modulatorsElectronics Letters, 1988
- Switching operation in intersectional type field effect MQW optical switchElectronics Letters, 1988
- Integrated optics approach for advanced semiconductor lasersProceedings of the IEEE, 1987
- Gain and the threshold of three-dimensional quantum-box lasersIEEE Journal of Quantum Electronics, 1986
- Band-structure engineering for low-threshold high-efficiency semiconductor lasersElectronics Letters, 1986