High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN
- 30 July 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (5), 1035-1037
- https://doi.org/10.1063/1.1597989
Abstract
GaN/InGaN double heterojunction bipolar transistors with a regrown extrinsic base have been fabricated on SiC substrates. The maximum common-emitter current gain exceeds 2000 at the collector current of 15 mA for a device. In addition, the offset voltage in the common-emitter current–voltage characteristics was reduced from 5 to 1 V. This indicates that the large offset voltage reported previously was mainly due to the degraded base ohmic characteristics. The regrowth of is effective for improving the characteristics of nitride heterojunction bipolar transistors.
Keywords
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