Spin relaxation of conduction electrons in highly doped semiconductors (InSb, Si, Ge)
- 1 January 1972
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 49 (1), 287-297
- https://doi.org/10.1002/pssb.2220490127
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Some Features of ESR and Spin–Lattice Relaxation of Electrons in Ge and InSb with Different Donor ConcentrationsPhysica Status Solidi (b), 1970
- Effect of Doping on the Electron Spin Resonance in Phosphorus Doped Silicon. IV. Experimental Study at Liquid Helium TemperatureJournal of the Physics Society Japan, 1969
- On the modes of acoustoelectric gain in n-InSbPhysics Letters A, 1969
- Electron Spin Resonance in-Type InSbPhysical Review B, 1968
- Effect of Doping on the Electron Spin Resonance in Phosphorus Doped Silicon. IIJournal of the Physics Society Japan, 1966
- Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresPhysical Review B, 1966
- Electron Spin Resonance in Phosphorus Doped Silicon at Low TemperaturesJournal of the Physics Society Japan, 1965
- Effect of Doping on the Electron Spin Resonance in Phosphorus Doped SiliconJournal of the Physics Society Japan, 1964
- g Factors and Spin-Lattice Relaxation of Conduction ElectronsPublished by Elsevier ,1963
- Theory of the Effect of Spin-Orbit Coupling on Magnetic Resonance in Some SemiconductorsPhysical Review B, 1954