Thermal radiation from laser heated silicon and pyrometric temperature measurements
- 15 July 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (2), 159-161
- https://doi.org/10.1063/1.95153
Abstract
We report time-resolved measurements of thermal radiation during laser heating of silicon using 10-ns laser pulses. The data provide further evidence that the laser-induced high reflectivity phase is due to melting of the surface. From thermal emission spectra the evolution of the surface temperature for both the crystalline and the liquid state is obtained.Keywords
This publication has 9 references indexed in Scilit:
- Time-resolved temperature measurement of picosecond laser irradiated siliconApplied Physics Letters, 1983
- Synchrotron X-Ray Diffraction Study of Silicon during Pulsed-Laser AnnealingPhysical Review Letters, 1982
- Laser-Induced Melt Dynamics of Si and SilicaPhysical Review Letters, 1981
- Reactive laser-evaporation for hydrogenated amorphous siliconApplied Physics Letters, 1981
- Measurement of Lattice Temperature of Silicon during Pulsed Laser AnnealingPhysical Review Letters, 1981
- Macroscopic theory of pulsed-laser annealing. I. Thermal transport and meltingPhysical Review B, 1981
- Raman Measurement of Lattice Temperature during Pulsed Laser Heating of SiliconPhysical Review Letters, 1980
- Time-resolved reflectivity of ion-implanted silicon during laser annealingApplied Physics Letters, 1978
- Surface area dependent corrections in the theory of black body radiationOptics Communications, 1971