Laser-Induced Melt Dynamics of Si and Silica

Abstract
Microscopic observations of blackbody emission from high-power cw-laser-irradiated silicon films on silica reveal: (I) Radiation of 1.06 μm produces a thermal runaway phenomenon in polycrystalline Si that terminates with the melt. (II) The laser-induced melt is inhomogeneous at the melting temperature. Lamellae of solid Si, which has a high emissivity, coexist with the low-emissivity melt. These lamellae transmit near-band-gap radiation, which is blocked by the molten phase, and they appear and disappear dynamically.