Tunnelling current in PbTe-Pb0.8Sn0.2Te heterojunctions
- 30 November 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (11), 1123-1126
- https://doi.org/10.1016/0038-1101(80)90022-2
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Carrier concentration and mobility of PbTe and Pb1−xSnxTe LPE thin layersJournal of Applied Physics, 1979
- Continuous operation over 1500 h of a PbTe/PbSnTe double-heterostructure laser at 77 KApplied Physics Letters, 1977
- PbTe and Pb0.8Sn0.2Te epitaxial films on cleaved BaF2 substrates prepared by a modified hot-wall techniqueJournal of Applied Physics, 1976
- Backside−illuminated Pb1−xSnxTe heterojunction photodiodeApplied Physics Letters, 1975
- Lead telluride-lead tin telluride heterojunction diode arraySolid-State Electronics, 1975
- Threshold reduction in Pb1−xSnx Te laser diodes through the use of double heterojunction geometriesApplied Physics Letters, 1974
- Double heterostructure Pb1-xSnx Te–PbTe lasers with cw operation at 77 KApplied Physics Letters, 1974
- Liquid phase epitaxial growth of laser heterostructures in Pb1−xSnxTeApplied Physics Letters, 1974
- Single heterojunction Pb1−x Snx Te diode lasersApplied Physics Letters, 1973
- Electrical Transport in nGe-pGaAs Heterojunctions†International Journal of Electronics, 1966