GaN: from fundamentals to applications
- 30 July 1999
- journal article
- Published by Elsevier in Materials Science and Engineering B
- Vol. 61-62, 305-309
- https://doi.org/10.1016/s0921-5107(98)00523-6
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Molecular doping of gallium nitrideApplied Physics Letters, 1999
- GaN Crystals: Growth and Doping Under PressureMRS Proceedings, 1997
- Study of defect states in GaN films by photoconductivity measurementApplied Physics Letters, 1995
- Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing RadiationJapanese Journal of Applied Physics, 1992
- Thermal Annealing Effects on P-Type Mg-Doped GaN FilmsJapanese Journal of Applied Physics, 1992
- Electron beam effects on blue luminescence of zinc-doped GaNJournal of Luminescence, 1988
- On the origin of free carriers in high‐conducting n‐GaNCrystal Research and Technology, 1983
- Photoluminescence of ion-implanted GaNJournal of Applied Physics, 1976
- Epitaxial growth and piezoelectric properties of A1N, GaN, and GaAs on sapphire or spinelJournal of Electronic Materials, 1973
- GaN blue light-emitting diodesJournal of Luminescence, 1972