A non-destructive method for the measurement of C-V characteristics of MOS capacitors using a gold ball probe
- 1 September 1976
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 37 (2), 149-156
- https://doi.org/10.1016/0040-6090(76)90177-2
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- A quasi-static technique for MOS C-V and surface state measurementsSolid-State Electronics, 1970
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- Ideal MOS Curves for SiliconBell System Technical Journal, 1966
- DENSITY OF SiO2–Si INTERFACE STATESApplied Physics Letters, 1966
- Simple Physical Model for the Space-Charge Capacitance of Metal-Oxide-Semiconductor StructuresJournal of Applied Physics, 1964