Lattice constant shift in Zn-doped InGaAIP grown by low-pressure metalorganic chemical vapor deposition
- 1 February 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 100 (1-2), 63-67
- https://doi.org/10.1016/0022-0248(90)90608-n
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Highly reliable InGaP/InGaAlP visible light emitting inner stripe lasers with 667 nm lasing wavelengthIEEE Journal of Quantum Electronics, 1989
- Zn doping characteristics for InGaAlP grown by low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1988
- A study of p-type doping for AlGaInP grown by low-pressure MOCVDJournal of Crystal Growth, 1988
- High-temperature CW operation of visible light-emitting GaInP/AlGaInP inner stripe laser diodesElectronics Letters, 1988
- Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasersJournal of Crystal Growth, 1986
- X-ray double-crystal diffractometry of Ga1−xAlxAs epitaxial layersJournal of Crystal Growth, 1978
- Determination of the lattice constant of epitaxial layers of III-V compoundsJournal of Crystal Growth, 1978
- A study of non-stoichiometry in gallium arsenide by precision lattice parameter measurementsJournal of Materials Science, 1971