Fatigue Effect and Temperature Dependence in Luminescence of Disordered Silicide Layer Compound: Siloxene (Si6H3(OH)3)
- 1 February 1983
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 52 (2), 671-676
- https://doi.org/10.1143/jpsj.52.671
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Luminescence fatigue and light-induced electron spin resonance in amorphous silicon-hydrogen alloysSolar Energy Materials, 1982
- Structural model of two-level glass statesPhysical Review B, 1981
- New Evidence for Defect Creation by High Optical Excitation in Glow Discharge Amorphous SiliconJapanese Journal of Applied Physics, 1980
- Non-radiative recombination at valence-alternation pairsJournal of Physics C: Solid State Physics, 1980
- Intrinsic-Defect Photoluminescence in Amorphous SiPhysical Review Letters, 1979
- Luminescence studies of plasma-deposited hydrogenated siliconPhysical Review B, 1978
- Radiative recombination in amorphous As2Se3Physica Status Solidi (a), 1973
- Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon CarbidePhysical Review Letters, 1969
- Electron Paramagnetic Resonance from Clean Single-Crystal Cleavage Surfaces of SiliconPhysical Review B, 1968
- Farbe und Fluoreszenz ringförmiger Si‐Verbindungen, II. Fluoreszenz und Farbe des Siloxens und seiner DerivateEuropean Journal of Inorganic Chemistry, 1962