Reactive sputtering of gallium nitride thin films for GaAs MIS structures
- 15 February 1978
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (4), 252-253
- https://doi.org/10.1063/1.90009
Abstract
Amorphous gallium nitride was deposited onto various substrates by reactive sputtering of gallium in nitrogen ambient. Higher pressure up to 2×10−1 Torr is effective in making films closer to the stoichiometric composition. Annealing at 350 °C improves the insulating property of as‐deposited films by decreasing dc and ac conductance. The surface‐state density and time constant of a GaAs MIS structure, corrected for the dispersive behavior of the insulator, was derived as 7.6×1011 cm−2 eV−1 and 1.9×10−4 sec, respectively. This surface‐state density is much lower than that for the native oxide.Keywords
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