A comparison of absolute yields of excited neutrals and positive ions from ion-bombarded surfaces
- 15 March 1980
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 170 (1-3), 591-595
- https://doi.org/10.1016/0029-554x(80)91080-0
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- The sputtering process and sputtered ion emissionSurface Science, 1979
- Absolute photon yields in the sputter-induced optical emission processApplied Physics Letters, 1978
- A method of quantitative analysis based on ion bombardment induced secondary ion and photon emissionSurface Science, 1978
- De-excitation processes near the surface of ion bombarded SiO2 and SiSurface Science, 1976
- Similarities in photon and ion emissions induced by sputteringSurface Science, 1976
- The effect of adsorption of Cs and coadsorption of Cs and O2 on bombardment-induced light emission from Cu and Al surfacesNuclear Instruments and Methods, 1976
- Adsorption of gases studied by secondary ion emission mass spectrometrySurface Science, 1975
- Surface investigation of solids by the statical method of secondary ion mass spectroscopy (SIMS)Surface Science, 1973
- Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline TargetsPhysical Review B, 1969
- Interpretation of-Ar Collisions at 50 KeVPhysical Review Letters, 1965