High quality In0.53Ga0.47As Schottky diode formed by graded superlattice of In0.53Ga0.47As/In0.52Al0.48As
- 8 May 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (19), 1863-1865
- https://doi.org/10.1063/1.101261
Abstract
A high quality In0.53Ga0.47As Schottky barrier diode fabricated by using a thin graded superlattice (SL) of In0.53Ga0.47As/In0.52Al0.48As grown by molecular beam epitaxy is reported for the first time in this letter. The effective Schottky barrier heights of ∼0.71 and ∼0.60 eV were obtained for the Au‐ and Cr‐Schottky contacts, respectively. Excellent current‐voltage and capacitance‐voltage characteristics were obtained for these diodes. The graded InGaAs/InAlAs SL structure allows one to circumvent the problem of carrier pileup associated with abrupt heterostructures, and hence is advantageous for forming Schottky contacts on InGaAs for high‐speed optoelectronic device applications.Keywords
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