Electronic structure and bonding properties in TiSi2
- 1 October 1990
- journal article
- research article
- Published by Springer Nature in Zeitschrift für Physik B Condensed Matter
- Vol. 78 (3), 423-430
- https://doi.org/10.1007/bf01313324
Abstract
No abstract availableKeywords
This publication has 34 references indexed in Scilit:
- Electronic properties on silicon-transition metal interface compoundsSurface Science Reports, 1985
- Chemical and structural aspects of reaction at the Ti/Si interfacePhysical Review B, 1984
- ELS study on the initial stage of Ti-silicide formation on Si(1 1 1) at room temperatureSolid State Communications, 1984
- Chemical reaction and Schottky-barrier formation at V/Si interfacesPhysical Review B, 1984
- Interface catalytic effect: Cr at the Si(111)-Au interfacePhysical Review B, 1983
- Microscopic properties and behavior of silicide interfacesSurface Science, 1983
- Electronic structure of silicide-silicon interfacesThin Solid Films, 1982
- Electronic states and microstructure at the silicide-silicon interfaceThin Solid Films, 1982
- Interface metallurgy and electronic properties of silicidesJournal of Vacuum Science and Technology, 1981
- Refractory silicides for integrated circuitsJournal of Vacuum Science and Technology, 1980