On the shrinkage of rod-shaped defects in boron-ion-implanted silicon

Abstract

Three different types of rod‐shaped defects formed during postimplantation annealing of boron‐implanted silicon are distinguished in annealing experiments carried out on transmission electron microscope specimens. It is shown that rod‐shaped defects can be boron precipitates, Frank dipoles, or perfect a/2 dL/dt at three different temperatures for a given isolated defect. Boron diffusion appeared to be the rate‐determining process. The second type, Frank dipoles, were often observed to unfault, transforming into the third type during annealing. At the time of unfaulting the newly formed perfect dipole was always observed to rotate on its glide cylinder to near edge orientation.