Gas-phase free radical reactions in the glow-discharge deposition of hydrogenated amorphous silicon from silane and disilane
- 15 March 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (6), 2290-2291
- https://doi.org/10.1063/1.334378
Abstract
An analysis of a measurement by Matsuda and co-workers of the lifetimes of the free radicals involved in the glow-discharge deposition of amorphous hydrogenated silicon from silane and disilane at 20-mTorr pressure is consistent with the hypothesis that SiH or SiH2, but not SiH3, is the dominant radical in the deposition from silane at that pressure.Keywords
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