p-type doping in Si molecular beam epitaxy by coevaporation of boron

Abstract

High quality epitaxial (100) Si films prepared by molecular beam epitaxy have been doped p type by coevaporation of elemental boron. The sticking coefficient of B was found to be independent of growth temperature over the range 700–900 °C, and doping levels from 1×10¹⁵ to 7×10¹⁷ cm⁻³ have been achieved. Arbitrary doping profiles have been obtained by varying the power into the B furance.