Temperature effects in silicon avalanche diodes
- 31 January 1974
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (1), 99-106
- https://doi.org/10.1016/0038-1101(74)90118-x
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- The distribution of gains in uniformly multiplying avalanche photodiodes: ExperimentalIEEE Transactions on Electron Devices, 1972
- The distribution of gains in uniformly multiplying avalanche photodiodes: TheoryIEEE Transactions on Electron Devices, 1972
- Noise Characteristics in Silicon PhotodiodesJapanese Journal of Applied Physics, 1969
- A model of the avalanche photodiodeIEEE Transactions on Electron Devices, 1967
- An optimized avalanche photodiodeIEEE Transactions on Electron Devices, 1967
- Avalanche breakdown of diffused silicon p-n junctionsIEEE Transactions on Electron Devices, 1966
- Low-frequency noise measurements in silicon avalanche photodiodesIEEE Transactions on Electron Devices, 1966
- Multiplication noise in uniform avalanche diodesIEEE Transactions on Electron Devices, 1966
- Recent Results Obtained with High Field, Internally Amplifying Semiconductor Radiation DetectorsIEEE Transactions on Nuclear Science, 1966
- High-speed photodiode signal enhancement at avalanche breakdown voltageIEEE Transactions on Electron Devices, 1965