Cathodoluminescence study of a silicon dioxide layer on silicon with the aid of Auger electron spectroscopy
- 1 December 1977
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (12), 5380-5381
- https://doi.org/10.1063/1.323546
Abstract
Silicon dioxide layers were investigated for analyzing irradiation effects by a new technique of cathodoluminescence (CL) with accelerating voltages from 2.5 to 10 kV. The irradiation‐dependent 280‐ and 530‐nm CL peaks were characteristic in dry‐grown oxides and reduced in wet‐grown or P2O5‐doped oxides. The AES (Auger electron spectroscopy) study of the dissociation of SiO2 and phosphosilicate glass (PSG) was helpful in analyzing the luminescence centers. The CL study may enable the in situ analysis of the electron‐beam‐irradiation effects in oxide‐silicon structures.Keywords
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