Scanning tunneling microscope study of the c(2×8) ordering in the ``1×1'' phase on the quenched Si(111) surface
- 15 June 1997
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 55 (23), 15444-15447
- https://doi.org/10.1103/physrevb.55.15444
Abstract
We study the atomic structure of the c(2×8) ordering in the ``1×1'' region on the quenched Si(111) surface to examine the trace of the stacking fault layer formation in the ``1×1'' region. For the c(2×8) ordering, two models have been proposed; the dimer chain model with the stacking fault layer and the simple adatom model without the stacking fault layer. Our dual-polarity scanning tunneling microscope images showed that the empty-state protrusion appears at the site adjacent to that of the occupied-state protrusion. This supports the simple adatom model for the c(2×8) ordering. In the unit cell of c(2×8), asymmetry in contrast to protrusions was also observed at low bias voltages. This is attributed to the buckling of the rest atom as in the Ge(111)c(2×8) reconstruction. No trace of the stacking fault layer was found in the c(2×8) ordering. The trace of the stacking fault layer was found only at the boundary between the ``1×1'' and the 7×7 region. At the boundary, the stacking fault layer intruded into the ``1×1'' region from some corner holes of the edge of the 7×7 region.Keywords
This publication has 23 references indexed in Scilit:
- Critical Domain Size of theStructure for Nucleation and Growth on Si(111) Quenched SurfacesPhysical Review Letters, 1995
- High-Temperature Scanning Tunneling Microscopy (STM) Observation of Metastable Structures on Quenched Si(111) SurfacesJapanese Journal of Applied Physics, 1995
- Kinetics of the Si(111)2 × 1→ 5 × 5 and 7 × 7 transformation studied by scanning tunneling microscopySurface Science, 1991
- Formation of the 5×5 reconstruction on cleaved Si(111) surfaces studied by scanning tunneling microscopyPhysical Review B, 1990
- Origins of stress on elemental and chemisorbed semiconductor surfacesPhysical Review Letters, 1989
- Dimer–adatom–stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2×8) to Si(111)-(2×2), -(5×5), -(7×7), and -(9×9) with scanning tunneling microscopyPhysical Review B, 1989
- Dimer-chain model for the 7×7 and the 2×8 reconstructed surfaces of reconstructed surfaces of Si(111) and Ge(111)Physical Review B, 1986
- Structure analysis of Si(111)-7 × 7 reconstructed surface by transmission electron diffractionSurface Science, 1985
- The (7 × 7) ↔ (1 × 1) phase transition on Si(111)Surface Science, 1985
- Direct observation of the phase transition between the (7 × 7) and (1 × 1) structures of clean (111) silicon surfacesSurface Science, 1981