Charge transport and trapping characteristics in thin nitride-oxide stacked films
- 1 November 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (11), 616-618
- https://doi.org/10.1109/55.9294
Abstract
A charge transport and trapping model for thin nitride-oxide stacked films between silicon substrates and polysilicon gates is proposed. Nitride-oxide stacked films can be thought of as an oxide film with electron trapping at the nitride/oxide interface. The density of electron trapping is determined by the current-continuity requirement. The electron trapping reduces the leakage current and helps to lower the incidence of early failures for nitride-oxide stacked films.<>Keywords
This publication has 5 references indexed in Scilit:
- Charge transport and trapping model for scaled nitride-oxide stacked filmsApplied Surface Science, 1987
- Determination of the Fowler-Nordheim tunneling barrier from nitride to oxide in oxide:nitride dual dielectricIEEE Electron Device Letters, 1986
- A high density 4M DRAM process using folded bitline adaptive side-wall isolated capacitor (FASIC) cellPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- MOS and bipolar VLSI technologies using electron-beam lithographyProceedings of the IEEE, 1983
- Charge Transport and Storage in Metal-Nitride-Oxide-Silicon (MNOS) StructuresJournal of Applied Physics, 1969