Atomic Structure of Ordered InGaP Crystals Grown on (001)GaAs Substrates by Metalorganic Chemical Vapor Deposition
- 1 November 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (11A), L1824-1827
- https://doi.org/10.1143/jjap.26.l1824
Abstract
InGaP crystals grown on (001)GaAs substrates by metalorganic chemical vapor deposition are structurally evaluated by transmission electron microscopy. High-resolution electron microscopy observation and electron diffraction analysis of both the (110) and the (11̄0) cross-section specimens strongly suggest that ordering of column III atoms on only two sets of the (111) planes with doubling in periodicity of (111) layers, i.e., In/Ga/In/Ga/In/Ga. . ., is occurring in the crystal. The ordering of the crystal is not perfect, and the ordered regions are assumed to be plate-like microdomains.Keywords
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