Tip-gating effect in scanning impedance microscopy of nanoelectronic devices

Abstract

Electronic transport in semiconducting single-walled carbon nanotubes is studied by combined scanning gate microscopy and scanning impedance microscopy (SIM). Depending on the probe potential, SIM can be performed in both invasive and noninvasive modes. High-resolution imaging of the defects is achieved when the probe acts as a local gate and simultaneously as an electrostatic probe of local potential. A class of weak defects becomes observable even if they are located in the vicinity of strong defects. The imaging mechanism of tip-gating scanning impedance microscopy is discussed.