Dark current transport mechanism of p-i-n hydrogenated amorphous silicon diodes

Abstract

The dark current-voltage characteristics of p-i-n hydrogenated amorphous silicon diodes with various thicknesses of the intrinsic layer (i-layer) (770–9300 Å) are systematically investigated. The magnitude of the forward current is found to be independent of thickness of the i layer, which is obviously against the simple conventional junction theory. It has been demonstrated through various experiments that the forward current of amorphous p-i-n diodes is limited by a layer thinner than 770 Å, possibly being the p/i interface or a narrow zone of the i layer.