Magnetoquantum effects in III-V tunneling heterostructures

Abstract

A two-parameter variational wave function is used to calculate the electronic properties of the two-dimensional accumulation layer in a single-barrier tunneling heterostructure. This model is used to describe the effect of a magnetic-field applied perpendicular to the tunneling barrier. Using a Gaussian broadened density of states to describe the Landau-level structure, the magneto-oscillations in the Fermi energy, the sheet density, and the tunneling current are calculated. The tunneling current determined by this model agrees qualitatively with the experimental results. The contribution of the density of states on the magnetocapacitance of the tunneling heterostructure is also studied. It is found that apart from the density of states, there is another important effect on the magnetocapacitance due to charge redistribution.