Sub-band structure for electrons and holes in inversion and accumulation layers at the InGaAs-InP interface
- 1 December 1987
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 2 (12), 802-808
- https://doi.org/10.1088/0268-1242/2/12/009
Abstract
No abstract availableKeywords
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