Oxygen-Related Defects in Irradiated Germanium
- 1 June 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (6A), L353
- https://doi.org/10.1143/jjap.22.l353
Abstract
Oxygen-related defects produced in oxygen-doped germanium by 1.5 MeV electron irradiation were studied by DLTS technique. Three electron trapping levels attributable to this type of defect were found. The E c-0.25 eV level is deduced to be introduced by two kinds of defects, namely, the germanium A-center (oxygen-vacancy complex) and the defect associated with the 715 cm-1 infrared absorption band reported by Whan. The E c-0.29 eV level and the E c- 0.13 eV level are attributable to the defects associated with the 819 cm-1 and the 731 cm-1 infrared absorption bands in her paper.Keywords
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