Comment on ‘‘Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers’’
- 15 February 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 70 (7), 1030
- https://doi.org/10.1103/physrevlett.70.1030
Abstract
A Comment on the Letter by N. Grandjean et al., Phys. Rev. Lett. 69, 796 (1992).Keywords
This publication has 5 references indexed in Scilit:
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- Kinetically controlled critical thickness for coherent islanding and thick highly strained pseudomorphic films of As on GaAs(100)Physical Review B, 1992
- Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layersPhysical Review Letters, 1992
- Local dimer exchange in surfactant-mediated epitaxial growthPhysical Review Letters, 1992
- Surfactants in epitaxial growthPhysical Review Letters, 1989