Kinetics of passivation of centers at the (111) Si- interface
- 15 November 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 38 (14), 9657-9666
- https://doi.org/10.1103/physrevb.38.9657
Abstract
This paper is concerned with the determination of the kinetic parameters and the chemical reactions that characterize the passivation of centers with molecular hydrogen. centers are paramagnetic defects at the (111) Si- interface. In this study centers associated with thermal oxides grown on (111) silicon substrates at 850 °C were measured with electron paramagnetic resonance. We observe that the resonance appears to be unaffected by subsequent in situ vacuum anneals for temperatures up to at least 850 °C.
Keywords
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