Transport profiles, the influence of internal stress and potential fluctuations in thin silicon films on sapphire
- 5 March 1982
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 89 (1), 13-18
- https://doi.org/10.1016/0040-6090(82)90466-7
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Electron scattering profiles in SOS films measured by temperature-dependent Hall effectElectronics Letters, 1981
- Determination of existing stress in silicon films on sapphire substrate using Raman spectroscopySolid-State Electronics, 1980
- New model of conduction mechanism in semi-insulating GaAsJournal of Applied Physics, 1979