Chemical-equilibrium model of optimala-Si:H growth from
- 15 April 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (11), 7952-7954
- https://doi.org/10.1103/physrevb.41.7952
Abstract
A model of optimal hydrogenated-amorphous-silicon growth based on bulk chemical reactions involving Si-Si and Si-H bonds is proposed. The optimal growth temperature is determined by the balance between the rate of hydrogen diffusion and the rate of film growth.Keywords
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