A study of phase equilibria and heterojunctions in Ga–In–As–Sb quaternary system
- 1 January 1978
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 13 (6), 631-638
- https://doi.org/10.1002/crat.19780130605
Abstract
The phase diagram of the Ga–In–As–Sb quaternary system has been determined experimentally and also has been treated on the base of thermodynamic calculations. The liquidus data were obtained by DTA and solidus data were determined using electron microprobe analysis on LPE‐layers of GaxIn1–xAsySb1–y on GaSb and InAs substrates. Isolattice‐parameter heterostructures prepared on these substrates were free of mismatch dislocations and suitable for application to light‐emitting diodes and semiconductor lasers.This publication has 10 references indexed in Scilit:
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