New Donor Formation in n-Type Czochralski-Grown Silicon
- 1 November 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (11R)
- https://doi.org/10.1143/jjap.24.1450
Abstract
The effects of preannealing in the temperature range from 350°C to 550°C on new donor formation were studied in n-type Czochralski-grown silicon, and it was found that the new donor formation rate is controlled by the density of electrically inactive embryos of new donors. The energy of formation of new donors was found to be 1.7 eV. The effect of new donors on the thermal donor formation was studied through 650°C annealing and subsequent 450°C annealing. The thermal donor formation is suppressed in the sample containing new donors. The results indicate that carbon atoms have a complex effect on the formation of oxygen donors.Keywords
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