On the donor activity of oxygen in silicon at temperatures from 500 to 800 °C
- 16 March 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 64 (1), 151-158
- https://doi.org/10.1002/pssa.2210640116
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
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- Precipitation of oxygen in dislocation-free siliconPhysica Status Solidi (a), 1979
- On the electrical activity of oxygen in siliconPhysica Status Solidi (a), 1979
- Photoluminescence Spectra of Thermal Donors in SiliconJapanese Journal of Applied Physics, 1979
- The effects of heat treatment on dislocation-free oxygen-containing silicon crystalsJournal of Applied Physics, 1977
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958
- Effect of Heat Treatment upon the Electrical Properties of Silicon CrystalsJournal of Applied Physics, 1957