Inductively coupled plasma etching of HgCdTe
- 1 July 2003
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 32 (7), 816-820
- https://doi.org/10.1007/s11664-003-0076-4
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Developments in the fabrication and performance of high-quality HgCdTe detectors grown on 4-in. Si substratesJournal of Electronic Materials, 2002
- MBE growth and device processing of MWIR HgCdTe on large area Si substratesJournal of Electronic Materials, 2001
- Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4″ silicon substratesJournal of Electronic Materials, 2001
- Optimization of dry etch process conditions for HgCdTe detector arraysJournal of Electronic Materials, 1999
- High-density plasma etching of compound semiconductorsJournal of Vacuum Science & Technology A, 1997
- Dry etching of Hg1−xCdxTe using CH4/H2/Ar/N2 electron cyclotron resonance plasmasJournal of Electronic Materials, 1996
- Characterization of the CH4/H2/Ar High Density Plasma Etch Process for HgCdTeMRS Proceedings, 1996
- Reaction chemistry and resulting surface structure of HgCdTe etched in CH4/H2 and H2 ECR plasmasJournal of Electronic Materials, 1995
- Electron cyclotron resonance reactive ion etching of fine features in HgxCd1−xTe using CH4/H2 plasmasJournal of Vacuum Science & Technology A, 1993
- Dry etching of CdTe/GaAs epilayers using CH4/H2 gas mixturesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993