Dry etching of Hg1−xCdxTe using CH4/H2/Ar/N2 electron cyclotron resonance plasmas
- 1 August 1996
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 25 (8), 1270-1275
- https://doi.org/10.1007/bf02655019
Abstract
No abstract availableKeywords
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