Photovoltaic GaAs quantum well infrared detectors at 4.2 μm using indirect AlxGa1−x barriers
- 8 April 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (14), 1551-1553
- https://doi.org/10.1063/1.105175
Abstract
We have demonstrated the first bound to continuum state GaAs/AlxGa1−xAs quantum well infrared detector which has a peak response λp=4.2 μm in the center of the midwavelength (λ=3–5 μm) infrared band. Although the detector uses indirect AlxGa1−xAs barriers, excellent hot‐electron transport and a high detectivity D*λ=1012 cm√Hz/W were achieved.Keywords
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