Tunable Stimulated Raman Scattering from Conduction Electrons in InSb

Abstract

We report the observation of tunable stimulated Raman scattering from the spin-flip process of conduction electrons in InSb. With the C${\mathrm{O}}_2$ laser at 10.6 μ as the pump, the Raman laser radiation can be tuned from ∼11.7 to ∼13.0 μ by varying the magnetic field from ∼48 to ∼100 kG. Raman laser power output of ∼1-W peak with linewidth less than 0.05 ${\mathrm{cm}}^{-1\mathrm{}}$ has been obtained. Raman conversion efficiency of ∼5×${10}^{-4\mathrm{}}$ is reported.